Physics – Condensed Matter – Materials Science
Scientific paper
2002-02-20
Physics
Condensed Matter
Materials Science
25 pages includind 5 figures
Scientific paper
Thick (~50 nm) films of Hf were evaporated onto bare and oxidized Si(001) samples, and thin (~monolayer) films of Hf were evaporated onto clean Si(001)-(2x1) surfaces. Upon annealing to 1000$^/circ$C, films of HfSi2 were formed after reaction times that depended upon the surface condition of the substrate before deposition. The chemical state of the reacted surfaces were characterized using x-ray photoelectron spectroscopy, and the shifts in binding energy upon silicide formation were recorded. Even for thick films, low-energy electron diffraction (LEED) revealed that the (2x1) pattern of the Si substrate returned, suggesting that 3-dimensional islanding of the HfSi2 film had occurred. The islanding behavior was confirmed for thin films using LEED and x-ray standing waves. Streaking in the LEED patterns for the thick films suggest that the island morphology is influenced by the underlying Si substrate.
Brinck A. V.
Johnson-Steigelman H. T.
Lyman P. F.
No associations
LandOfFree
Hafnium silicide formation on Si(001) does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Hafnium silicide formation on Si(001), we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hafnium silicide formation on Si(001) will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-103029