H/T Scaling of the Magnetoconductance in Two Dimensions near the Conductor-Insulator Transition

Details H/T Scaling of the Magnetoconductance in Two Dimensions near the Conductor-Insulator Transition H/T Scaling of the Magnetoconductance in Two Dimensions near the Conductor-Insulator Transition

1997-12-18

arxiv.org/abs/cond-mat/9712223v2

Physics

Condensed Matter

Disordered Systems and Neural Networks

References updated and comparison with recent theory added

Scientific paper

For an electron density near the H=0 insulator-to-conductor transition, the magnetoconductivity of the low-temperature conducting phase in high-mobility silicon MOSFETs is consistent with the form $\Delta\sigma(H_{||},T)\equiv\sigma(H_{||},T)-\sigma(0,T) = f(H_{||}/T)$ for magnetic fields $H_{||}$ applied parallel to the plane of the electron system. This sets a valuable constraint on theory and provides further evidence that the electron spin is central to the anomalous H=0 conducting phase in two dimensions.

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