Growth of Single Unit-Cell Superconducting La$_{2-x}$Sr$_x$CuO$_{4}$ Films

Details Growth of Single Unit-Cell Superconducting La$_{2-x}$Sr$_x$CuO$_{4}$ Films Growth of Single Unit-Cell Superconducting La$_{2-x}$Sr$_x$CuO$_{4}$ Films

2003-02-13

arxiv.org/abs/cond-mat/0302261v1

Physics

Condensed Matter

Superconductivity

to be published in "Solid State Electonics" special issue, conference proceedings of the 9th Workshop on Oxide Electronics, St

Scientific paper

We have developed an approach to grow high quality ultrathin films of La$_{2-x}$Sr$_x$CuO$_{4}$ with molecular beam epitaxy, by adding a homoepitaxial buffer layer in order to minimize the degradation of the film structure at the interface. The advantage of this method is to enable a further reduction of the minimal thickness of a superconducting La$_{1.9}$Sr$_{0.1}$CuO$_{4}$ film. The main result of our work is that a single unit cell (only two copper oxide planes) grown on a SrLaAlO$_4$ substrate exhibits a superconducting transition at 12.5 K (zero resistance) and an in-plane magnetic penetration depth $\lambda_{ab}(0)$ = 535 nm.

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