Growth of graphene on 6H-SiC by molecular dynamics simulation

Details Growth of graphene on 6H-SiC by molecular dynamics simulation Growth of graphene on 6H-SiC by molecular dynamics simulation

2012-02-22

arxiv.org/abs/1202.4846v1

Condens. Matter Phys., 2011, vol. 14, No. 4, p. 43802:1-7

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 pages, 5 figures

Scientific paper

10.5488/CMP.14.43802

Classical molecular-dynamics simulations were carried out to study epitaxial growth of graphene on 6H-SiC(0001) substrate. It was found that there exists a threshold annealing temperature above which we observe formation of graphitic structure on the substrate. To check the sensitivity of the simulation results, we tested two empirical potentials and evaluated their reliability by the calculated characteristics of graphene, its carbon-carbon bond-length, pair correlation function, and binding energy.

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