Growth of epitaxial nanowires by controlled coarsening of strained islands

Details Growth of epitaxial nanowires by controlled coarsening of strained islands Growth of epitaxial nanowires by controlled coarsening of strained islands

2004-03-18

arxiv.org/abs/cond-mat/0403478v1

Physics

Condensed Matter

Materials Science

Scientific paper

10.1063/1.1792374

We show that elongated nanowires can be grown on crystal surfaces by allowing large strained two-dimensional islands to desorb by varying the adatom supersaturation or chemical potential. The width of the wires formed in this process is determined by a competition between the repulsive elastic interactions of the long edges of the wires and the thermodynamic driving force which tends to decrease the distance between these edges. The proposed mechanism allows for control of the wire sizes by changing the growth conditions, in particular, the vapor pressure of the material that is being deposited.

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