Growth Angle and Melt Meniscus of the RF-heated Floating Zone in Silicon Crystal Growth

Details Growth Angle and Melt Meniscus of the RF-heated Floating Zone in Silicon Crystal Growth Growth Angle and Melt Meniscus of the RF-heated Floating Zone in Silicon Crystal Growth

2011-02-18

arxiv.org/abs/1102.3800v1

J. Crystal Growth 314 (2011) 43-47

Physics

Condensed Matter

Materials Science

Scientific paper

10.1016/j.jcrysgro.2010.11.101

This article presents a direct measurement of the growth angle during the growth of a cylindrical 2" silicon crystal using a radio-frequency heated floating zone process. From the high-resolution pictures taken during the process, this growth angle was evaluated to be 11{\deg}{\pm}2{\deg}. Furthermore, the free surface of the melt was modeled using the Laplace-Young equation. This model has to include the electromagnetic pressure calculated by the surface ring currents approximation. The results were compared to the experimental free surface derived from video frames. It could be shown that the calculated free surface will only fit the experimentally determined one if the right growth angle is considered.

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