Growth and properties of strained VOx thin films with controlled stoichiometry

Details Growth and properties of strained VOx thin films with controlled stoichiometry Growth and properties of strained VOx thin films with controlled stoichiometry

2003-01-15

arxiv.org/abs/cond-mat/0301263v3

Phys. Rev. B 69, 075404 (2004)

Physics

Condensed Matter

Strongly Correlated Electrons

12 pages, 16 figures included, revised version

Scientific paper

10.1103/PhysRevB.69.075404

We have succeeded in growing epitaxial films of rocksalt VOx on MgO(001) substrates. The oxygen content as a function of oxygen flux was determined using 18O2-RBS and the vanadium valence using XAS. The upper and lower stoichiometry limits found are similar to the ones known for bulk material (0.8

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