Growth and Properties of Heavy Fermion CeCu2Ge2 and CeFe2Ge2 thin films

Details Growth and Properties of Heavy Fermion CeCu2Ge2 and CeFe2Ge2 thin films Growth and Properties of Heavy Fermion CeCu2Ge2 and CeFe2Ge2 thin films

2011-03-30

arxiv.org/abs/1103.5813v1

Physics

Condensed Matter

Materials Science

Scientific paper

Epitaxial films of heavy fermion CeCu2Ge2 and CeFe2Ge2 are grown on DyScO3 and MgO substrates using molecular beam epitaxy. The growth begins via island nucleation leading to a granular morphology. The grains grow flat with c-axis orientation after nucleating, as indicated by in-situ reflection high energy electron diffraction (RHEED) and ex-situ analysis including atomic force microscopy (AFM) and x-ray diffraction (XRD). These single phase films show similar temperature dependent transport to single crystals of the materials indicating that similar collective order occurs in the films as in single crystals.

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