Growth and optical properties of self-assembled InGaAs Quantum Posts

Details Growth and optical properties of self-assembled InGaAs Quantum Posts Growth and optical properties of self-assembled InGaAs Quantum Posts

2007-09-14

arxiv.org/abs/0709.2392v2

Physica E 40, 1785-1789 (2008)

Physics

Condensed Matter

Materials Science

Proccedings paper for MSS-13, 7 pages, 4 figures

Scientific paper

10.1016/j.physe.2007.09.165

We demonstrate a method to grow height controlled, dislocation-free InGaAs quantum posts (QPs) on GaAs by molecular beam epitaxy (MBE) which is confirmed by structural investigations. The optical properties are compared to realistic 8-band k.p calculations of the electronic structure which fully account for strain and the structural properties of the QP. Using QPs embedded in n-i-p junctions we find wide range tunability of the interband spectrum and giant static dipole moments.

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