Growth and characterization of epitaxial LuNi2B2C thin films on MgO single crystals

Details Growth and characterization of epitaxial LuNi2B2C thin films on MgO single crystals Growth and characterization of epitaxial LuNi2B2C thin films on MgO single crystals

2010-02-18

arxiv.org/abs/1002.3584v2

Physics

Condensed Matter

Superconductivity

Scientific paper

Biaxially textured LuNi2BC thin films with Tc up to 15.8 K and a residual resistivity ratio up to 15 have been prepared. The films were deposited on MgO(110) substrates using pulsed laser deposition from a stoichiometric target. Via the precise control of the deposition rate, a biaxial texture is favored within a broad range of the deposition temperature. The full epitaxial relationship between the borocarbide film, the \luo interface layer and the substrate is (110)[001]MgO II (110)[001]Lu2O3 II (001)[100]LuNi2B2C. A very sharp in--plane alignment of about 1\textdegree and an out--of--plane order of about 2.5\textdegree was achieved in the \luni layer. However, a systematic study using different deposition temperatures shows that the temperature is crucial for phase formation and appealing superconducting properties. Applying optimized deposition conditions, critical temperatures of up to 15.8 K and steep superconducting transitions of about 0.3 K are reproducibly obtained. We further analyzed the upper critical field Hc2 of one film deposited under optimized conditions. It was resistively measured along the [001] direction and fitted with a power law. The value of Hc2(0) = 9.82 T obtained from that fit is in very good agreement with single crystal data and the power exponent describing the positive curvature for small external magnetic fields of about 0.19 indicates a relatively low intraband scattering in the films.

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