Physics – Condensed Matter – Materials Science
Scientific paper
2005-09-23
Journal of Physics: Condensed Matter: 18(2006):1441.
Physics
Condensed Matter
Materials Science
5 pages, 3 figures
Scientific paper
10.1088/0953-8984/18/4/027
Using spin-1/2 description of valence holes and Kondo coupling between local spins and carriers, GaAs-based III-V diluted magnetic semiconductors (DMS)are studied in the coherent potential approximation(CPA). Our calculated relation of ground-state energy and impurity magnetization shows that ferromagnetism is always favorable at low temperatures. For very weak Kondo coupling, the density of states (DOS) of the host semiconductor is not modified much. Impurity band can be generated at the host band bottom only when Kondo coupling is strong enough. Using Weiss molecular theory, we predict a linear relation of Curie temperature with respect to Kondo coupling and doping concentration $x$ if the hole density is proportional to $x$.
Feng Sze-Shiang
Mochena Mogus
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