Graphite in the bi-layer regime: in-plane transport

Details Graphite in the bi-layer regime: in-plane transport Graphite in the bi-layer regime: in-plane transport

2009-03-21

arxiv.org/abs/0903.3646v2

Phys. Rev. B 80, 045418 (2009)

Physics

Condensed Matter

Materials Science

5 pages, 2 fig

Scientific paper

10.1103/PhysRevB.80.045418

An interplay between the increase in the number of carriers and the decrease in the scattering time is expected to result in a saturation of the in-plane resistivity, $\rho_{ab}$, in graphite above room temperature. Contrary to this expectation, we observe a pronounced increase in $\rho_{ab}$ in the interval between 300 and 900 K. We provide a theory of this effect based on intervalley scattering of charge carriers by high-frequency, graphene-like optical phonons.

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