Graphite based Schottky diodes formed on Si, GaAs and 4H-SiC substrates

Details Graphite based Schottky diodes formed on Si, GaAs and 4H-SiC substrates Graphite based Schottky diodes formed on Si, GaAs and 4H-SiC substrates

2009-10-04

arxiv.org/abs/0910.0615v1

Physics

Condensed Matter

Materials Science

5 pages, 3 figures, 1 table

Scientific paper

We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). Near room temperature, the forward-bias diode characteristics are well described by thermionic emission, and the extracted barrier heights, which are confirmed by capacitance voltage measurements, roughly follow the Schottky-Mott relation. Since the outermost layer of the graphite electrode is a single graphene sheet, we expect that graphene/semiconductor barriers will manifest similar behavior.

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