Graphene Thickness-Graded Transistors with Reduced Low-Frequency 1/f Noise

Details Graphene Thickness-Graded Transistors with Reduced Low-Frequency 1/f Noise Graphene Thickness-Graded Transistors with Reduced Low-Frequency 1/f Noise

2011-12-24

arxiv.org/abs/1112.5751v1

Applied Physics Letters, 100, 033103 (2012)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 4 figures

Scientific paper

We demonstrate graphene thickness-graded transistors with high electron mobility and low 1/f noise (f is a frequency). The device channel is implemented with few-layer graphene with the thickness varied from a single layer in the middle to few-layers at the source and drain contacts. It was found that such devices have electron mobility comparable to the reference single-layer graphene devices while producing lower noise levels. The metal doping of graphene and difference in the electron density of states between the single-layer and few-layer graphene cause the observed noise reduction. The results shed light on the noise origin in graphene.

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