Graphene Synthesis via the High Pressure - High Temperature Growth Process

Details Graphene Synthesis via the High Pressure - High Temperature Growth Process Graphene Synthesis via the High Pressure - High Temperature Growth Process

2008-02-27

arxiv.org/abs/0802.4058v1

Micro & Nano Letters, 3, 29 (2008)

Physics

Condensed Matter

Materials Science

Scientific paper

We report on a new method for graphene synthesis and assessment of the properties of the resulting large-area graphene layers. Graphene was produced by the high pressure - high temperature growth from the natural graphitic source by utilizing the molten Fe-Ni catalysts for dissolution of carbon. The resulting large-area graphene flakes were transferred to the silicon - silicon oxide substrates for the spectroscopic micro-Raman and scanning electron microscopy inspection. The analysis of the G peak, D, T+D and 2D bands in the Raman spectra under the 488-nm laser excitation indicate that the high pressure - high temperature technique is capable of producing the high-quality large-area single-layer graphene with a low defect density. The proposed method may lead to a more reliable graphene synthesis and facilitate its purification and chemical doping.

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