Graphene p-n junction Arrays as Quantum-Hall Resistance Standards

Details Graphene p-n junction Arrays as Quantum-Hall Resistance Standards Graphene p-n junction Arrays as Quantum-Hall Resistance Standards

2011-05-04

arxiv.org/abs/1105.0838v3

Appl. Phys. Lett. 99, 022112 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

accepted for publication in Applied Physics Letters

Scientific paper

10.1063/1.3608157

We demonstrate a device concept to fabricate resistance standards made of quantum Hall series arrays by using p-type and n-type graphene. The ambipolar nature of graphene allows fabricating series quantum Hall resistors without complex multi-layer metal interconnect technology, which is required when using conventional GaAs two-dimensional electron systems. As a prerequisite for a precise resistance standard we confirm the vanishing of longitudinal resistance across a p-n junction for metrological relevant current levels in the range of a few \muA.

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