Graphene Oxidation: Thickness Dependent Etching and Strong Chemical Doping

Physics – Condensed Matter – Materials Science

Scientific paper

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

15 pages, 5 figures

Scientific paper

10.1021/nl0808684

Patterned graphene shows substantial potential for applications in future molecular-scale integrated electronics. Environmental effects are a critical issue in a single layer material where every atom is on the surface. Especially intriguing is the variety of rich chemical interactions shown by molecular oxygen with aromatic molecules. We find that O2 etching kinetics vary strongly with the number of graphene layers in the sample. Three-layer-thick samples show etching similar to bulk natural graphite. Single-layer graphene reacts faster and shows random etch pits in contrast to natural graphite where nucleation occurs at point defects. In addition, basal plane oxygen species strongly hole dope graphene, with a Fermi level shift of ~0.5 eV. These oxygen species partially desorb in an Ar gas flow, or under irradiation by far UV light, and readsorb again in an O2 atmosphere at room temperature. This strongly doped graphene is very different than graphene oxide made by mineral acid attack.

No associations

LandOfFree

Say what you really think

Search LandOfFree.com for scientists and scientific papers. Rate them and share your experience with other people.

Rating

Graphene Oxidation: Thickness Dependent Etching and Strong Chemical Doping does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Graphene Oxidation: Thickness Dependent Etching and Strong Chemical Doping, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Graphene Oxidation: Thickness Dependent Etching and Strong Chemical Doping will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFWR-SCP-O-421631

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.