Graphene on metal surface: gap opening and n-doping

Details Graphene on metal surface: gap opening and n-doping Graphene on metal surface: gap opening and n-doping

2007-12-25

arxiv.org/abs/0712.4008v1

Physics

Condensed Matter

Materials Science

4 pages, 3 figures

Scientific paper

Graphene grown on metal surface, Cu(111), with a boron nitride(BN) buffer layer is studied for the first time. Our first-principles calculations reveal that charge is transferred from the copper substrate to graphene through the BN buffer layer which results in a n-doped graphene in the absence of a gate voltage. More importantly, a gap of 0.2 eV which is comparable to that of a typical narrow gap semicondutor opens just 0.5 eV below the Fermi-level at the Dirac point. The Fermi-level can be easily shifted inside this gap to make graphene a semiconductor which is crucial for graphene-based electronic devices. A graphene based p-n junction can be realized with graphene eptaxially grown on metal surface.

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