Graphene Nano-Ribbon Electronics

Details Graphene Nano-Ribbon Electronics Graphene Nano-Ribbon Electronics

2007-01-24

arxiv.org/abs/cond-mat/0701599v1

Physica E: Low-dimensional Systems and Nanostructures, Vol. 40/2, pp 228-232 (2007)

Physics

Condensed Matter

Materials Science

6 pages, 7 figures

Scientific paper

10.1016/j.physe.2007.06.020

We have fabricated graphene nano-ribbon field-effect transistor devices and investigated their electrical properties as a function of ribbon width. Our experiments show that the resistivity of a ribbon increases as its width decreases, indicating the impact of edge states. Analysis of temperature dependent measurements suggests a finite quantum confinement gap opening in narrow ribbons. The electrical current noise of the graphene ribbon devices at low frequency is found to be dominated by the 1/f noise.

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