Graphene microwave transistors on sapphire substrates

Details Graphene microwave transistors on sapphire substrates Graphene microwave transistors on sapphire substrates

2011-06-27

arxiv.org/abs/1106.5529v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

We have developed metal-oxide graphene field-effect transistors (MOGFETs) on sapphire substrates working at microwave frequencies. For monolayers, we obtain a transit frequency up to ~ 80 GHz for a gate length of 200 nm, and a power gain maximum frequency of about ~ 3 GHz for this specific sample. Given the strongly reduced charge noise for nanostructures on sapphire, the high stability and high performance of this material at low temperature, our MOGFETs on sapphire are well suited for a cryogenic broadband low-noise amplifier.

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