Graphene growth on h-BN by Molecular Beam Epitaxy

Details Graphene growth on h-BN by Molecular Beam Epitaxy Graphene growth on h-BN by Molecular Beam Epitaxy

2012-04-11

arxiv.org/abs/1204.2443v2

Physics

Condensed Matter

Materials Science

Solid State Communications, 2012

Scientific paper

10.1016/j.ssc.2012.04.005

The growth of single layer graphene nanometer size domains by solid carbon source molecular beam epitaxy on hexagonal boron nitride (h-BN) flakes is demonstrated. Formation of single-layer graphene is clearly apparent in Raman spectra which display sharp optical phonon bands. Atomic-force microscope images and Raman maps reveal that the graphene grown depends on the surface morphology of the h-BN substrates. The growth is governed by the high mobility of the carbon atoms on the h-BN surface, in a manner that is consistent with van der Waals epitaxy. The successful growth of graphene layers depends on the substrate temperature, but is independent of the incident flux of carbon atoms.

Affiliated with

Also associated with

No associations

Rating

Graphene growth on h-BN by Molecular Beam Epitaxy does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Graphene growth on h-BN by Molecular Beam Epitaxy, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Graphene growth on h-BN by Molecular Beam Epitaxy will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-717076