Physics – Condensed Matter – Materials Science
Scientific paper
2011-09-06
J. Phys. D: Appl. Phys. 45, 154001 (2012)
Physics
Condensed Matter
Materials Science
22 pages, 11 figures, Proceedings of STEG-2 Conference; eliminated Figs. 4 and 7 from version 1, for brevity, and added Refs.
Scientific paper
The morphology of graphene on SiC {0001} surfaces formed in various environments including ultra-high vacuum, 1 atm of argon, and 10^-6 to 10^-4 Torr of disilane is studied by atomic force microscopy, low-energy electron microscopy, and Raman spectroscopy. The graphene is formed by heating the surface to 1100 - 1600 C, which causes preferential sublimation of the Si atoms. The argon atmosphere or the background of disilane decreases the sublimation rate so that a higher graphitization temperature is required, thus improving the morphology of the films. For the (0001) surface, large areas of monolayer-thick graphene are formed in this way, with the size of these areas depending on the miscut of the sample. Results on the (000-1) surface are more complex. This surface graphitizes at a lower temperature than for the (0001) surface and consequently the growth is more three-dimensional. In an atmosphere of argon the morphology becomes even worse, with the surface displaying markedly inhomogeneous nucleation, an effect attributed to unintentional oxidation of the surface during graphitization. Use of a disilane environment for the (000-1) surface is found to produce improved morphology, with relatively large areas of monolayer-thick graphene.
Feenstra R. M.
He Guowei
Luxmi
Mende P. C.
Srivastava Namita
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