Graphene Field Effect Transistors: Diffusion-Drift Theory

Details Graphene Field Effect Transistors: Diffusion-Drift Theory Graphene Field Effect Transistors: Diffusion-Drift Theory

2011-02-11

arxiv.org/abs/1102.2348v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

24 pages, 13 figures, a chapter in "Graphene, Theory, Research and Applications", INTECH

Scientific paper

Based on explicit solution of current continuity equation in the graphene
FET's channel the semi-classical diffusion-drift description of the carrier
transport and I-V characteristics model has been developed. Role of
rechargeable defects (interface traps) near or at the interface between
graphene and insulated layers has also described.

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