Graphene field-effect transistors based on boron nitride gate dielectrics

Details Graphene field-effect transistors based on boron nitride gate dielectrics Graphene field-effect transistors based on boron nitride gate dielectrics

2011-01-25

arxiv.org/abs/1101.4712v1

IEEE IEDM Tech. Dig., 556-559, 2010

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 8 figures

Scientific paper

Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices exhibit mobility values exceeding 10,000 cm2/V-sec and current saturation down to 500 nm channel lengths with intrinsic transconductance values above 400 mS/mm. The work demonstrates the favorable properties of using h-BN as a gate dielectric for graphene FETs.

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