Physics – Condensed Matter – Materials Science
Scientific paper
2010-08-20
Phys. Rev. B 83, 195425 (2011)
Physics
Condensed Matter
Materials Science
23 pages, 7 figures. Revised title; expanded; updated references
Scientific paper
10.1103/PhysRevB.83.195425
Topological defects can affect the physical properties of graphene in unexpected ways. Harnessing their influence may lead to enhanced control of both material strength and electrical properties. Here we present a new class of topological defects in graphene composed of a rotating sequence of dislocations that close on themselves, forming grain boundary loops that either conserve the number of atoms in the hexagonal lattice or accommodate vacancy/interstitial reconstruction, while leaving no unsatisfied bonds. One grain boundary loop is observed as a "flower" pattern in scanning tunneling microscopy (STM) studies of epitaxial graphene grown on SiC(0001). We show that the flower defect has the lowest energy per dislocation core of any known topological defect in graphene, providing a natural explanation for its growth via the coalescence of mobile dislocations.
Cockayne Eric
Crain Jason N.
First Phillip N.
Guisinger Nathan P.
Rutter Gregory M.
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