Grain Boundary Diffusion in Copper under Tensile Stress

Details Grain Boundary Diffusion in Copper under Tensile Stress Grain Boundary Diffusion in Copper under Tensile Stress

2003-07-02

arxiv.org/abs/cond-mat/0307065v1

Physics

Condensed Matter

Materials Science

5 pages 3 figures. submitted to JMR

Scientific paper

Stress enhanced self-diffusion of Copper on the $\Sigma$3 twin grain boundary was examined with molecular dynamics simulations. The presence of uniaxial tensile stress results in a significant reduction in activation energy for grain-boundary self-diffusion of magnitude 5 eV per unit strain. Using a theoretical model of point defect formation and diffusion, the functional dependence of the effective activation energy $Q$ on uniaxial tensile strain $\epsilon$ is shown to be described by $Q(\epsilon)=Q_0-E_0V^*\epsilon$ where $E_0$ is the zero-temperature Young's modulus and $V^*$ is an effective activation volume. The simulation data agree well with this model and comparison between data and model suggests that $V^*=0.6\Omega$ where $\Omega$ is the atomic volume. $V^*/\Omega=0.6$ is consistent with a vacancy-dominated diffusion mechanism.

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