Grading effects in semiconductor nanowires with longitudinal heterostructures

Details Grading effects in semiconductor nanowires with longitudinal heterostructures Grading effects in semiconductor nanowires with longitudinal heterostructures

2011-05-05

arxiv.org/abs/1105.1096v1

Phys. Rev. B 78, 155306 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

8 pages, 6 figures

Scientific paper

10.1103/PhysRevB.78.155306

The role of graded interfaces between materials in a cylindrical free-standing quantum wire with longitudinal heterostructures is theoretically investigated, by solving the Schr\"odinger equation within the effective mass approximation. Previous work on such wires with abrupt interfaces have predicted that, as the wire radius is reduced, the effective potential along the growth direction is altered and might lead to a carrier confinement at the barriers, as in a type-II system. Our results show that when graded interfaces are considered, such potential acquires a peculiar form, which presents cusps at the interfacial regions, yielding to electron confinement at interfaces. Numerical results also show that, in some special cases, interfacial confinement and type-I to type-II transitions can also be induced by applying a magnetic field parallel to the wire axis.

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