Goos-Hänchen-like shifts for Dirac fermions in monolayer graphene barrier

Details Goos-Hänchen-like shifts for Dirac fermions in monolayer graphene barrier Goos-Hänchen-like shifts for Dirac fermions in monolayer graphene barrier

2010-04-02

arxiv.org/abs/1004.0350v1

Eur. Phys. J. B 79, 203-208 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 5 figures

Scientific paper

10.1140/epjb/e2010-10553-6

We investigate the Goos-H\"{a}nchen-like shifts for Dirac fermions in transmission through a monolayer graphene barrier. The lateral shifts, as the functions of the barrier's width and the incidence angle, can be negative and positive in Klein tunneling and classical motion, respectively. Due to their relations to the transmission gap, the lateral shifts can be enhanced by the transmission resonances when the incidence angle is less than the critical angle for total reflection, while their magnitudes become only the order of Fermi wavelength when the incidence angle is larger than the critical angle. These tunable beam shifts can also be modulated by the height of potential barrier and the induced gap, which gives rise to the applications in graphene-based devices.

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