Gold nanoparticle-pentacene memory-transistors

Details Gold nanoparticle-pentacene memory-transistors Gold nanoparticle-pentacene memory-transistors

2008-02-19

arxiv.org/abs/0802.2633v1

Physics

Condensed Matter

Materials Science

Scientific paper

10.1063/1.2896602

We demonstrate an organic memory-transistor device based on a pentacene-gold nanoparticles active layer. Gold (Au) nanoparticles are immobilized on the gate dielectric (silicon dioxide) of a pentacene transistor by an amino-terminated self-assembled monolayer. Under the application of writing and erasing pulses on the gate, large threshold voltage shift (22 V) and on/off drain current ratio of ~3E4 are obtained. The hole field-effect mobility of the transistor is similar in the on and off states (less than a factor 2). Charge retention times up to 4500 s are observed. The memory effect is mainly attributed to the Au nanoparticles.

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