Glissile dislocations with transient cores in silicon

Details Glissile dislocations with transient cores in silicon Glissile dislocations with transient cores in silicon

2009-09-21

arxiv.org/abs/0909.3760v1

Physical Review Letters 103 (2009) 065505

Physics

Condensed Matter

Materials Science

Scientific paper

We report an unexpected characteristic of dislocation cores in silicon. Using first-principles calculations, we show that all the stable core configurations for a non-dissociated 60$^\circ$ dislocation are sessile. The only glissile configuration, previously obtained by nucleation from surfaces, surprinsingly corresponds to an unstable core. As a result, the 60$^\circ$ dislocation motion is solely driven by stress, with no thermal activation. We predict that this original feature could be relevant in situations for which large stresses occur, such as mechanical deformation at room temperature. Our work also suggests that post-mortem observations of stable dislocations could be misleading, and that mobile unstable dislocation cores should be taken into account in theoretical investigations.

Affiliated with

Also associated with

No associations

Rating

Glissile dislocations with transient cores in silicon does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Glissile dislocations with transient cores in silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Glissile dislocations with transient cores in silicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-432715