Giant room temperature piezoresistance in a metal/silicon hybrid

Details Giant room temperature piezoresistance in a metal/silicon hybrid Giant room temperature piezoresistance in a metal/silicon hybrid

2008-03-05

arxiv.org/abs/0803.0655v1

Phys. Rev. Lett. 100, 145501 (2008)

Physics

Condensed Matter

Materials Science

4 pages, 4 figures, accepted for publication in Physical Review Letters

Scientific paper

10.1103/PhysRevLett.100.145501

Metal/semiconductor hybrids are artificially created structures presenting novel properties not exhibited by either of the component materials alone. Here we present a giant piezoresistance effect in a hybrid formed from silicon and aluminum. The maximum piezoresistive gage factor (GF) of 843, measured at room temperature, compares with a GF of -93 measured in the bulk homogeneous silicon. This piezoresistance boost is not due to the silicon/aluminum interface, but results from a stress induced anisotropy in the silicon conductivity that acts to switch current away from the highly conductive aluminum for uniaxial tensile strains. Its magnitude is shown, via the calculation of hybrid resistivity weighting functions, to depend only on the geometrical arrangement of the component parts of the hybrid.

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