Giant planar Hall effect in colossal magnetoresistive La(0.84)Sr(0.16)MnO(3) thin films

Details Giant planar Hall effect in colossal magnetoresistive La(0.84)Sr(0.16)MnO(3) thin films Giant planar Hall effect in colossal magnetoresistive La(0.84)Sr(0.16)MnO(3) thin films

2004-04-13

arxiv.org/abs/cond-mat/0404291v1

Appl. Phys. Lett. 84, 2593 (2004)

Physics

Condensed Matter

Other Condensed Matter

Scientific paper

10.1063/1.1695197

The transverse resistivity in thin films of La(0.84)Sr(0.16)MnO(3) (LSMO)exhibits sharp field-symmetric jumps below Tc. We show that a likely source of this behavior is the giant planar Hall effect (GPHE) combined with biaxial magnetic anisotropy. The effect is comparable in magnitude to that observed recently in the magnetic semiconductor Ga(Mn)As. It can be potentially used in applications such as magnetic sensors and non-volatile memory devices.

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