Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities

Details Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities

2000-11-23

arxiv.org/abs/cond-mat/0011405v1

Physics

Condensed Matter

4 pages, 4 figures

Scientific paper

10.1103/PhysRevB.63.201204

A giant negative magnetoresistance has been observed in bulk germanium doped with multiply charged deep impurities. Applying a magnetic field the resistance may decrease exponentially at any orientation of the field. A drop of the resistance as much as about 10000% has been measured at 6 T. The effect is attributed to the spin splitting of impurity ground state with a very large g-factor in the order of several tens depending on impurity.

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