Giant Magnetoresistance Effect in Organic Material and Its Potential for Magnetic Sensor

Details Giant Magnetoresistance Effect in Organic Material and Its Potential for Magnetic Sensor Giant Magnetoresistance Effect in Organic Material and Its Potential for Magnetic Sensor

2011-10-06

arxiv.org/abs/1110.1123v1

Proceeding of 2nd ICICI-BME, 8-9 Nov. 2011, Bandung, Indonesia, pp. 372 - 375

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 6 figures, sumbitted to ICICI-BME 2011 "Science and Technology for Health"

Scientific paper

10.1109/ICICI-BME.2011.6108661

Giant magnetoresistance (GMR) material has great potential as next generation magnetic field sensing devices, have magnetic properties and high electrical potential to be developed into various applications such as: magnetic field sensor measurements, current measurements, linear and rotational position sensor, data storage, head recording, and non-volatile magnetic random access memory (MRAM). Today, the new GMR materials based on organic material obtained after allowing for Organic Magnetoresistance (OMAR) was found in OLEDs (organic light-emitting diodes). This organic material is used as a spacer layer in GMR devices with spin-valve structures. Traditionally, metals and semiconductors are used as a spacer layer in spin-valve. However, several factors such as spin scattering caused by large atoms of the spacer material and the interface scattering of ferromagnetic with a spacer, will limit the efficiency of spin-valve. In this paper, we describe a new GMR materials based on organic material that we have developed.

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