Giant magnetoresistance and extraordinary magnetoresistance in inhomogeneous semiconducting DyNiBi

Details Giant magnetoresistance and extraordinary magnetoresistance in inhomogeneous semiconducting DyNiBi Giant magnetoresistance and extraordinary magnetoresistance in inhomogeneous semiconducting DyNiBi

2007-09-26

arxiv.org/abs/0709.4182v2

Solid State Communications 148, 175 (2008)

Physics

Condensed Matter

Materials Science

3 pages, 3 figures

Scientific paper

The semiconducting half-Heulser compound DyNiBi shows a negative giant magnetoresistance (GMR) below 200 K. Except for a weak deviation, this magnetoresistance scales roughly with the square of the magnetization in the paramagnetic state, and is related to the metal-insulator transition. At low temperature, a positive magnetoresistance is found, which can be suppressed by high fields. The magnitude of the positive magnetoresistance changes slightly with the amount of impurity phase.

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