Giant low-temperature piezoresistance effect in AlAs two-dimensional electrons

Details Giant low-temperature piezoresistance effect in AlAs two-dimensional electrons Giant low-temperature piezoresistance effect in AlAs two-dimensional electrons

2004-11-30

arxiv.org/abs/cond-mat/0411741v1

Applied Physics Letters -- October 25, 2004 -- Volume 85, Issue 17, pp. 3766-3768

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1063/1.1808883

We present piezoresistance measurements in modulation doped AlAs quantum wells where the two-dimensional electron system occupies two conduction band valleys with elliptical Fermi contours. Our data demonstrate that, at low temperatures, the strain gauge factor (the fractional change in resistance divided by the sample's fractional length change) in this system exceeds 10,000. Moreover, in the presence of a moderate magnetic field perpendicular to the plane of the two-dimensional system, gauge factors up to 56,000 can be achieved. The piezoresistance data can be explained qualitatively by a simple model that takes into account intervalley charge transfer.

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