Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

Details Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

2007-10-28

arxiv.org/abs/0710.5304v2

Phys. Rev. Lett. 100, 016602 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevLett.100.016602

We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements have shown that mobilities significantly higher than 200,000 cm2/Vs are achievable, if extrinsic disorder is eliminated. A sharp (threshold-like) increase in resistivity observed above approximately 200K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intra-ripple flexural phonons.

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