Giant inelastic tunneling in epitaxial graphene mediated by localized states

Details Giant inelastic tunneling in epitaxial graphene mediated by localized states Giant inelastic tunneling in epitaxial graphene mediated by localized states

2010-04-19

arxiv.org/abs/1004.3179v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

6 pages, 5 figures, accepted for publication in Phys. Rev. B

Scientific paper

Local electronic structures of nanometer-sized patches of epitaxial graphene and its interface layer with SiC(0001) have been studied by atomically resolved scanning tunneling microscopy and spectroscopy. Localized states belonging to the interface layer of a graphene/SiC system show to have an essential influence on the electronic structure of graphene. Giant enhancement of inelastic tunneling, reaching 50% of the total tunneling current, has been observed at the localized states on a nanometer-sized graphene monolayer surrounded by defects.

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