GEOPHYSICS, ASTRONOMY, AND ASTROPHYSICS: Memory Effect of Metal—Insulator—Silicon Capacitors with SiO2/HfO2/Al2O3 Dielectrics

Details GEOPHYSICS, ASTRONOMY, AND ASTROPHYSICS: Memory Effect of Metal—Insulator—Silicon Capacitors with SiO2/HfO2/Al2O3 Dielectrics GEOPHYSICS, ASTRONOMY, AND ASTROPHYSICS: Memory Effect of Metal—Insulator—Silicon Capacitors with SiO2/HfO2/Al2O3 Dielectrics

May 2008

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2008chphl..25.1908l&link_type=abstract

Chinese Physics Letters, Volume 25, Issue 5, pp. 1908-1911 (2008).

Physics

Scientific paper

Charge trapping characteristics of the metal-insulator-silicon (MIS) capacitors with SiO2/HfO2/Al2O3 stacked dielectrics are investigated for memory applications. A capacitance-voltage hysteresis memory window as large as 7.3 V is achieved for the gate voltage sweeping of ± 12 V, and a flat-band voltage shift of 1.5 V is observed in terms of programming under 5V and 1 ms. Furthermore, the time- and voltage-dependent charge trapping characteristics are also demonstrated, the former is related to charge trapping saturation and the latter is ascribed to variable tunnelling barriers for electron injecting and discharging under different voltages.

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