Geometry-induced smoothing of van Hove singularities in capped carbon nanotubes

Details Geometry-induced smoothing of van Hove singularities in capped carbon nanotubes Geometry-induced smoothing of van Hove singularities in capped carbon nanotubes

2006-12-22

arxiv.org/abs/cond-mat/0612595v1

EPL 78, 47002 (2007)

Physics

Condensed Matter

Materials Science

6 pages, 3 figures, PACS: 73.22.-f, 71.20.Tx, 73.22.Dj

Scientific paper

10.1209/0295-5075/78/47002

The electronic states of capped semi-infinite nanotubes are studied within the phenomenological gauge field-theory model. A single manifold for the description of both the nanotube and the cap region (considered as nearly a half of either Ih or I fullerene) is suggested. The wavefunctions and the density of states (DoS) are numerically calculated for both metallic and semiconducting nanotubes. The smoothing of van Hove singularities is found and proven analytically. The comparison with the experimental observations is discussed.

Affiliated with

Also associated with

No associations

Rating

Geometry-induced smoothing of van Hove singularities in capped carbon nanotubes does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Geometry-induced smoothing of van Hove singularities in capped carbon nanotubes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Geometry-induced smoothing of van Hove singularities in capped carbon nanotubes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-530621