Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices

Details Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices

2008-09-12

arxiv.org/abs/0809.2225v1

Appl. Phys. Lett. 93, 162508 (2008)

Physics

Condensed Matter

Materials Science

Scientific paper

10.1063/1.3006333

Evidence of spin precession and dephasing ("Hanle effect") induced by an external magnetic field is the only unequivocal proof of spin-polarized conduction electron transport in semiconductor devices. However, when spin dephasing is very strong, Hanle effect in a uniaxial magnetic field can be impossible to measure. Using a Silicon device with lateral injector-detector separation over 2 millimeters, and geometrically-induced dephasing making spin transport completely incoherent, we show experimentally and theoretically that Hanle effect can still be measured using a two-axis magnetic field.

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