Generic nano-imprint process for fabrication of nanowire arrays

Details Generic nano-imprint process for fabrication of nanowire arrays Generic nano-imprint process for fabrication of nanowire arrays

2009-11-11

arxiv.org/abs/0911.2235v1

Physics

Condensed Matter

Materials Science

12 pages, 4 figures, 2 tables

Scientific paper

A generic process has been developed to grow nearly defect free arrays of (heterostructured) InP and GaP nanowires. Soft nanoimprint lithography has been used to pattern gold particle arrays on full 2 inch substrates. After lift-off organic residues remain on the surface, which induce the growth of additional undesired nanowires. We show that cleaning of the samples before growth with piranha solution in combination with a thermal anneal at 550 C for InP and 700 C for GaP results in uniform nanowire arrays with 1% variation in nanowire length, and without undesired extra nanowires. Our chemical cleaning procedure is applicable to other lithographic techniques such as e-beam lithography, and therefore represents a generic process.

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