Generation of spin currents via Raman scattering

Details Generation of spin currents via Raman scattering Generation of spin currents via Raman scattering

2005-08-09

arxiv.org/abs/cond-mat/0508230v1

Phys. Rev. Lett. 95, 056601 (2005)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevLett.95.056601

We show theoretically that stimulated spin flip Raman scattering can be used to inject spin currents in doped semiconductors with spin split bands. A pure spin current, where oppositely oriented spins move in opposite directions, can be injected in zincblende crystals and structures. The calculated spin current should be detectable by pump-probe optical spectroscopy and anomalous Hall effect measurement.

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