Generation of spin current and polarization under dynamic gate control of spin-orbit interaction in low-dimensional semiconductor systems

Details Generation of spin current and polarization under dynamic gate control of spin-orbit interaction in low-dimensional semiconductor systems Generation of spin current and polarization under dynamic gate control of spin-orbit interaction in low-dimensional semiconductor systems

2004-12-08

arxiv.org/abs/cond-mat/0412181v3

PHYSICAL REVIEW B 71, 195314 (2005)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 3 figures, RevTeX4

Scientific paper

10.1103/PhysRevB.71.195314

Based on the Keldysh formalism, the Boltzmann kinetic equation and the drift diffusion equation have been derived for studying spin polarization flow and spin accumulation under effect of the time dependent Rashba spin-orbit interaction in a semiconductor quantum well. The time dependent Rashba interaction is provided by time dependent electric gates of appropriate shapes. Several examples of spin manipulation by gates have been considered. Mechanisms and conditions for obtaining the stationary spin density and the induced rectified DC spin current are studied.

Affiliated with

Also associated with

No associations

Rating

Generation of spin current and polarization under dynamic gate control of spin-orbit interaction in low-dimensional semiconductor systems does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Generation of spin current and polarization under dynamic gate control of spin-orbit interaction in low-dimensional semiconductor systems, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Generation of spin current and polarization under dynamic gate control of spin-orbit interaction in low-dimensional semiconductor systems will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-169464