Generation of single colour centers by focussed nitrogen implantation

Details Generation of single colour centers by focussed nitrogen implantation Generation of single colour centers by focussed nitrogen implantation

2005-05-03

arxiv.org/abs/cond-mat/0505063v1

Appl. Phys. Lett. 87: Art. No. 261909 (2005)

Physics

Condensed Matter

Materials Science

6 pages, 3 figures

Scientific paper

10.1063/1.2103389

Single defect centers in diamond have been generated via nitrogen implantation. The defects have been investigated by single defect center fluorescence microscopy. Optical and EPR spectra unambiguously show that the produced defect is the nitrogen-vacancy colour center. An analysis of the nitrogen flux together with a determination of the number of nitrogen-vacancy centers yields that on average two 2 MeV nitrogen atoms need to be implanted per defect center.

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