Generation of coherent acoustic phonons in piezoelectric semiconductor heterostructures

Details Generation of coherent acoustic phonons in piezoelectric semiconductor heterostructures Generation of coherent acoustic phonons in piezoelectric semiconductor heterostructures

2003-01-03

arxiv.org/abs/cond-mat/0301031v2

Proceedings of SPIE 4992, 226 (2003)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, REVTeX, 8 figures, Paper presented at SPIE Photonics WEST 2003, Ultrafast Phenomena in Semiconductors VII, San Jose,

Scientific paper

10.1117/12.475714

We review some experimental and theoretical aspects of coherent acoustic phonon generation in piezoelectric semiconductor multiple quantum wells. In order to model more advanced and complicated nano-acoustic devices, a macroscopic continuum theory for the generation and propagation of coherent acoustic phonons in piezoelectric semiconductor heterostructures is presented. The macroscopic approach is applicable in the coherent regime, and can be easily utilized to study coherent acoustic devices based on piezoelectric semiconductor heterosutructures. For each phonon mode, the corresponding coherent acoustic field obeys a loaded string equation. The driven force has contributions from the piezoelectric and deformation potential couplings. We applied the theory to model the generation of coherent longitudinal acoustic phonons in (0001)-oriented InGaN/GaN multiple quantum wells. The numerical results are in good agreement with the experimental ones. By using the macroscopic theory, we also investigated the crystal-orientation effects on the generation of coherent acoustic phonons in wurtzite multiple quantum wells. It was found that coherent transverse acoustic phonons dominate the generation for certain orientation angles.

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