Generation and detection of non-Abelian matrix Berry phases through manipulation of electric confinement potential of a semiconductor quantum dot

Details Generation and detection of non-Abelian matrix Berry phases through manipulation of electric confinement potential of a semiconductor quantum dot Generation and detection of non-Abelian matrix Berry phases through manipulation of electric confinement potential of a semiconductor quantum dot

2007-08-07

arxiv.org/abs/0708.0895v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

6 pages, 7 figures

Scientific paper

A matrix Berry phase can be generated and detected by {\it all electric means} in II-VI or III-V n-type semiconductor quantum dots by changing the shape of the confinement potential. This follows from general symmetry considerations in the presence of spin-orbit coupling terms. The resulting 2 x 2 matrix Berry phase can be characterized by two numbers of geometric origin. We investigate how these parameters depend on the shape and area of closed adiabatic paths. We suggest how the matrix Berry phase may be detected in transport measurements.

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