Generalized Einstein relation for disordered semiconductors - implications for device performance

Details Generalized Einstein relation for disordered semiconductors - implications for device performance Generalized Einstein relation for disordered semiconductors - implications for device performance

2001-09-24

arxiv.org/abs/cond-mat/0109432v2

Applied Physics Letters (80) 11, 1948 (2002)

Physics

Condensed Matter

Statistical Mechanics

Scientific paper

10.1063/1.1461419

The ratio between mobility and diffusion parameters is derived for a Gaussian-like density of states. This steady-state analysis is expected to be applicable to a wide range of organic materials (polymers or small molecules) as it relies on the existence of quasi-equilibrium only. Our analysis shows that there is an inherent dependence of the transport in trap-free disordered organic-materials on the charge density. The implications for the contact phenomena and exciton generation rate in light emitting diodes as well as channel-width in field-effect transistors is discussed.

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