Ge/Si(001) Heterostructures with Quantum Dots: Formation, Defects, Photo-Electromotive Force and Terahertz Conductivity

Details Ge/Si(001) Heterostructures with Quantum Dots: Formation, Defects, Photo-Electromotive Force and Terahertz Conductivity Ge/Si(001) Heterostructures with Quantum Dots: Formation, Defects, Photo-Electromotive Force and Terahertz Conductivity

2012-03-26

arxiv.org/abs/1203.5631v1

Physics

Condensed Matter

Materials Science

Nanostructures: physics and technology http://http://www.ioffe.ru/NANO2012/

Scientific paper

Issues of Ge hut cluster nucleation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Data of HRTEM investigations of Ge/Si heterostructures are presented with the focus on low-temperature formation of perfect multilayer films. Exploration of the photovoltaic effect in Si p--i--n-structures with Ge quantum dots allowed us to propose a new approach to designing of infrared detectors. First data on THz dynamical conductivity of Ge/Si(001) heterostructures in the temperature interval from 5 to 300 K and magnetic fields up to 6 T are reported.

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