Ge growth on ion-irradiated Si self-affine fractal surfaces

Details Ge growth on ion-irradiated Si self-affine fractal surfaces Ge growth on ion-irradiated Si self-affine fractal surfaces

2004-03-09

arxiv.org/abs/cond-mat/0403241v1

Physics

Condensed Matter

Materials Science

5 pages, 2 figures and 1 table

Scientific paper

10.1016/j.susc.2004.06.201

We have carried out scanning tunneling microscopy experiments under ultrahigh vacuum condition to study the morphology of ultrathin Ge films eposited on pristine Si(100) and ion-irradiated Si(100) self-affine fractal surfaces. The pristine and the ion-irradiated Si(100) surface have roughness exponents of alpha=0.19+/-0.05 and alpha=0.82+/-0.04 respectively. These measurements were carried out on two halves of the same sample where only one half was ion-irradiated. Following deposition of a thin film of Ge (~6 A) the roughness exponents change to 0.11+/-0.04 and 0.99+/-0.06, respectively. Upon Ge deposition, while the roughness increases by more than an order of magnitude on the pristine surface, a smoothing is observed for the ion-irradiated surface. For the ion-irradiated surface the correlation length xi increases from 32 nm to 137 nm upon Ge deposition. Ge grows on Si surfaces in the Stranski-Krastanov or layer-plus-island mode where islands grow on a wetting layer of about three atomic layers. On the pristine surface the islands are predominantly of square or rectangular shape, while on the ion-irradiated surface the islands are nearly diamond shaped. Changes of adsorption behaviour of deposited atoms depending on the roughness exponent (or the fractal dimension) of the substrate surface are discussed.

Affiliated with

Also associated with

No associations

Rating

Ge growth on ion-irradiated Si self-affine fractal surfaces does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Ge growth on ion-irradiated Si self-affine fractal surfaces, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ge growth on ion-irradiated Si self-affine fractal surfaces will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-180489